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Thin Film BAW Composite Resonator simulation in COMOSL 3.5a
Posted 19/05/2012, 10:22 GMT-04:00 MEMS & Nanotechnology, MEMS & Nanotechnology Version 3.5a, Version 4.2 3 Replies
I'm currently engaged in the simulation of FBAR device in COMSOL 3.5a, and want to use this model.
However, "in the model library", I find that the admittance of electrode is defined as "0.5[mm]*nJs_smppn/1[V]", where 0.5[mm] is the width of the electrode, and "nJs_smppn" is the surface current density, which I don't know why, because we use the integration coupling variables, and the width of the electrode is the variable.
Then why we use the "0.5[mm]*nJs_smppn/1[V]", but not the "1.7[mm]*nJs_smppn/1[V]", where 1.7[mm] is the thickness of the 2D scheme of FBAR device.
Hello Jianan Wang
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