k·p Method for Strained Wurtzite GaN Band Structure
Application ID: 88271
This benchmark model computes the valence band structure of an unstrained and a strained bulk GaN wurtzite crystal, as a tutorial for users who wish to set up multiple wave function components with the Schrödinger Equation interface. The model follows the formulation given in the reference paper by Chuang and Chang. The diagonal and off-diagonal elements of the Hamiltonian matrix are entered using built-in features, with detailed instructions in the model documentation. The computed eigenvalues agree well with the analytic solution and Fig. 5 in the paper.
This model example illustrates applications of this type that would nominally be built using the following products:
however, additional products may be required to completely define and model it. Furthermore, this example may also be defined and modeled using components from the following product combinations:
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