A Galeria de Aplicações possui tutorias sobre o COMSOL Multiphysics e aplicativos de demonstração pertinentes às áreas de elétrica, mecânica, escoamento e química. Você pode baixar modelos e aplicativos de demonstração prontos e também tutoriais passo-a-passo para criá-los você mesmo. Os exemplos da galeria servem como um bom ponto de partida para o seu próprio trabalho de simulação. Use a função "Busca Rápida" para encontrar modelos da sua área de interesse. Faça o login, ou se cadastre, no COMSOL Access usando uma licença válida do COMSOL, para poder baixar os arquivos MPH.

Breakdown in a MOSFET

MOSFETs typically operate in three regimes depending on the drain-source voltage for a given gate voltage. Initially the current-voltage relation is linear, this is the Ohmic region. As the drain-source voltage increases the extracted current begins to saturate, this is the saturation region. As the drain-source voltage is further increased the breakdown region is entered, where the current ...

Wavelength Tunable LED

This application computes the emission properties of a AlGaN/InGaN LED. The emission intensity, spectrum, and efficiency are calculated for an applied voltage or as a function of voltage over a selected range. The indium composition in the light-emitting InGaN region can be varied in order to control the emission wavelength. When the emission occurs within the visible spectrum the corresponding ...

Surface Trapping in a Silicon Nanowire Gate-All-Around Device

A gate-all-around MOSFET consists of a nanowire with a gate electrode wrapped around the circumference. Since the entire nanowire forms the channel, this configuration provides the best possible electrostatic control of the channel and offers a good candidate for the miniaturization of MOSFETs. This model analyzes a silicon nanowire gate-all-around device, with different trap densities at the ...

Heterojunction 1D

This one-dimensional model simulates three different heterojunction configurations under forward and reverse bias. The model shows the difference in using the continuous quasi-Fermi levels model as opposed to the thermionic emission model to determine the current transfer occurring between the different materials creating the junction under bias. The energy levels obtained with the model are ...

Small Signal Analysis of a MOSFET

This model shows how to compute the AC characteristics of a MOSFET. Both the output conductance and the transconductance are computed as a function of the drain current.

DC Characteristics of a MESFET

In a MESFET, the gate forms a rectifying junction that controls the opening of the channel by varying the depletion width of the junction. In this model we simulate the response of a n-doped GaAs MESFET to different drain and gate voltages. For a n-doped material the electron concentration is expected to be orders of magnitude larger than the hole concentration. Accordingly, it is possible to ...

MOSFET with Mobility Models

This model shows how to add several linked mobility models to the simple MOSFET example.

Programming of a Floating Gate EEPROM Device

This model calculates the current and charge characteristics of a floating gate Electrically Erasable Programmable Read-Only Memory (EEPROM) device. A stationary study demonstrates the effects of varying the charge stored on the floating gate by computing Current-Voltage curves as a function of the control gate voltage for two different amounts of stored charge. Time dependent studies are then ...

Caughey-Thomas Mobility

With an increase in the parallel component of the applied field, carriers can gain energies above the ambient thermal energy and be able to transfer energy gained by the field to the lattice by optical phonon emission. The latter effect leads to a saturation of the carriers mobility. The Caughey Thomas mobility model adds high field velocity scattering to an existing mobility model (or to a ...

Lombardi Surface Mobility

Surface acoustic phonons and surface roughness have an important effect on the carrier mobility, especially in the thin inversion layer under the gate in MOSFETs. The Lombardi surface mobility model adds surface scattering resulting from these effects to an existing mobility model using Matthiessen’s rule. This model demonstrates how to use the Lombardi surface mobility model for the electron ...

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