A Galeria de Aplicações possui tutorias sobre o COMSOL Multiphysics® e aplicativos de demonstração pertinentes às áreas de elétrica, mecânica estrutural, acústica, escoamento e química. Você pode usar esses exemplos como um ponto de partida para o seu próprio trabalho de simulação baixando o modelo do tutorial ou o aplicativo e suas instruções. Use a função "Busca Rápida" para encontrar modelos da sua área de interesse. Para baixar os arquivos MPH, faça o login, ou se cadastre, no COMSOL Access usando uma licença válida do COMSOL, para poder baixar os arquivos MPH. Note que muitos dos exemplos disponibilizados aqui também podem ser acessados através da Application Libraries que faz parte do software COMSOL Multiphysics® e está disponível a partir do menu File.

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DC Characteristics of a MOS Transistor (MOSFET)

This model calculates the DC characteristics of a simple MOSFET. The drain current versus gate voltage characteristics are first computed in order to determine the threshold voltage for the device. Then the drain current vs drain voltage characteristics are computed for several gate voltages. The linear and saturation regions for the device can be identified from these plots.

InGaN/AlGaN Double Heterostructure LED

This model simulates a GaN based light emitting diode device. The emission intensity, spectrum, and efficiency are calculated as a function of the driving current. Direct radiative recombination across the bandgap is modeled, as well as non-radiative Auger and Trap-Assisted Scattering processes. This results in a sub-linear increase in emission intensity with increasing current, which is a ...

Si Solar Cell 1D

This tutorial model uses a simple 1D model of a silicon solar cell to illustrate the basic steps to set up and perform a semiconductor simulation with the Semiconductor Module. A user-defined expression is used for the photo-generation rate and the result shows typical I-V and P-V curves of solar cells. The carrier generation mechanism from the photovoltaic effect is not modeled in detail. ...

Si Solar Cell with Ray Optics

The Si Solar Cell with Ray Optics app combines the Ray Optics Module and the Semiconductor Module to illustrate the operation of a silicon solar cell for a specific date and location. The Ray Optics Module computes the average illumination for a date and location that are chosen by the app's user. Then, the Semiconductor Module computes the normalized output characteristics of the solar cell ...

GaAs PIN Photodiode

This simple model demonstrates how to use the Semiconductor Optoelectronics interfaces to model a simple GaAs PIN diode structure. Both the stimulated and spontaneous emission in the semiconductor are accounted for. The corresponding adsorption of the light and the associated change in the complex refractive index are included in a self consistent manner.

3D Analysis of a Bipolar Transistor

This model shows how to set up a 3D simulation of a n-p-n bipolar transistor. It is a 3D version of the device shown in the Bipolar Transistor model, and demonstrates how to extend semiconductor modeling into 3D using COMSOL Multiphysics. As in the 2D version of this model, the device is simulated whilst operating in the common-emitter regime. A voltage driven study is computed to characterize ...

PN-Junction 1D

This simple benchmark model computes the potential and carrier concentrations for a one-dimensional p-n junction using both the finite element and finite volume methods. The results are compared with an equivalent device from the book, "Semiconductor Devices: A Simulation Approach," by Kramer and Hitchon.

Simulation of an Ion-sensitive Field-effect Transistor (ISFET)

An ion-sensitive field-effect transistor (ISFET) is constructed by replacing the gate contact of a MOSFET with an electrolyte of interest. The concentration of a specific ionic species in the electrolyte can be determined by measuring the change in the gate voltage due to the interaction between the ions and the gate dielectric. This tutorial of an ISFET pH sensor illustrates the procedure to ...

Breakdown in a MOSFET

MOSFETs typically operate in three regimes depending on the drain-source voltage for a given gate voltage. Initially the current-voltage relation is linear, this is the Ohmic region. As the drain-source voltage increases the extracted current begins to saturate, this is the saturation region. As the drain-source voltage is further increased the breakdown region is entered, where the current ...

PN-Diode Circuit

This model extracts spice parameters for a silicon p-n junction diode. The spice parameters are used to create a lumped-element equivalent circuit model of a half-wave rectifier that is compared to a full device level simulation. In this example, a device model is made by connecting a 2D meshed p-n junction diode to a circuit containing a sinusoidal source, a resistor and a ground to form a ...

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