A First Principles Approach to Electron Beam Lithography using COMSOL Multiphysics® Simulation Software

R. Pryor[1]
[1]Pryor Knowledge Systems, Inc., USA
Published in 2019

Abstract: Line resolution, uniformity and focusing are the three (3) most important factors in the use of electron-beam lithography to form either high resolution masks or direct-write device etch patterns. This paper will present the observations and analyses made from a group of COMSOL Multiphysics® modeling studies that explore the influence of the electron energy, the coil constant, and the coil current on the beam depth of focus and the beam diameter ratio (starting beam-diameter/focused beam-diameter). Nominal value: 4

The Magnetic Lens model (COMSOL 10185) employs the COMSOL Multiphysics®AC/DC Module, Particle Tracing Module and the Charged Particle Tracing interface. The mathematical relationship of the focal length of the magnetic lens is given by:

                                                        f=K(V/i^2)

Where: f = focal length

K = coil constant

V = electron accelerating Voltage

i = coil current

Results: It is expected that the both the beam-ratio and the depth of focus will increase as accelerating voltage decreases and the coil current increases.

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