Hydrodynamic Heat Transport Model for Semiconductors with Complex Geometries Including Interfaces

A. Beardo Ricol[1], F. Alvarez Calafell[2]
[1]Universitat Autonoma de Barcelona (UAB), Spain
[2]Universitat Autonoma de Barcelona, Spain
Published in 2019

The development of new experimental techniques designed to measure the thermal response of semiconductors at reduced length and time scales is revealing the requirement of generalized heat transport models beyond the classical Fourier law [1,2].

We present the Kinetic Collective Model (KCM), consisting in the hydrodynamic heat transport equation with ab initio calculated coefficients and the corresponding boundary conditions [3,4]. The model equations have been implemented in the weak form using COMSOL Multiphysics® to predict the thermal response of electronic devices with complex geometries including interfaces at reduced length and time scales.

We compare the model predictions with experimental data on Frequency Domain Thermoreflectance Experiments (FDTR) in Silicon and with the effective thermal conductivity of Silicon thin films and holey films [3]. New phenomenology as phonon viscosity and vorticity arise from the transport equation by analogy with the Navier-Stokes equation for fluids, wich allow new physical insight of the non-Fourier effects taking place at the nanoscale due to boundaries and interfaces with arbitrary geometry.


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[3] A. Beardo et al. Phys Rev. Applied 11, 034003 (2019)

[4] P. Torres et al. Phys Rev. Materials 2, 076001 (2018)

[4] Y. Guo et. al., Phys. Rev. B 93, 035421 (2018)

[5] R.A. Guyer et. al. Phys. Rev. 2, 148 (1966)